Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm * and Na = 1x10“ cm ³ and (b) additional 6×10" cm of Nd? Note: use Effective density of %3! conduction band = 2.8 x 10 19 cm 3. Effective density of valance band =1.04 x 10 1º cm 3. T= 300 K, Boltzmann constant = 1.38x 102³ Kg s K', %3D
Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm * and Na = 1x10“ cm ³ and (b) additional 6×10" cm of Nd? Note: use Effective density of %3! conduction band = 2.8 x 10 19 cm 3. Effective density of valance band =1.04 x 10 1º cm 3. T= 300 K, Boltzmann constant = 1.38x 102³ Kg s K', %3D
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Transcribed Image Text:Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x10 cm 3 and Na = 1×10“ cm 3 and (b) additional 6x106 cm ³ of Nd? Note: use Effective density of
conduction band = 2.8 x 10 1º cm 3. Effective density of valance band =1.04 x 10 19 cm *. T= 300 K,
Boltzmann constant
1.38x 1023 Kg s K'.
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