O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 -3 cm and Na = 1x1016 -3 and (b) additional 6x1016 -3 of Nd? Note: use Effective density of cm cm conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm *. T= 300 K, Boltzmann constant = 1.38x 102 Kg s K. -23
O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 -3 cm and Na = 1x1016 -3 and (b) additional 6x1016 -3 of Nd? Note: use Effective density of cm cm conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm *. T= 300 K, Boltzmann constant = 1.38x 102 Kg s K. -23
Related questions
Question
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 2 steps