O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 -3 cm and Na = 1x1016 -3 and (b) additional 6x1016 -3 of Nd? Note: use Effective density of cm cm conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm *. T= 300 K, Boltzmann constant = 1.38x 102 Kg s K. -23

Question
O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x101° cm * and Na = 1x10 cm
and (b) additional 6x1016
cm * of Nd? Note: use Effective density of
conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm . T= 300 K,
Boltzmann constant = 1.38x 102 Kg s K.
-23
Transcribed Image Text:O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x101° cm * and Na = 1x10 cm and (b) additional 6x1016 cm * of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm . T= 300 K, Boltzmann constant = 1.38x 102 Kg s K. -23
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