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Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-³, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-³, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.

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Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Nd = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-3, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.
Transcribed Image Text:Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Nd = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-3, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.
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