Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-³, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.
Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na = 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-³, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³ Calculate the minority carrier concentration at the edge of the space charge regions.
Related questions
Question
Transcribed Image Text:Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Nd
= 10¹6 cm 3 and the doping concentration in the p region is Na = 6 x 10¹5 cm-3, and assume that a
forward bias of 0.90 V is applied to the pn junction. Note/ n = 1.5 x 10¹0 cm-³
Calculate the minority carrier concentration at the edge of the space charge regions.
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
Step by step
Solved in 2 steps with 2 images
