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Consider a silicon pn junction at T= 300 K. Assume the doping concentration in the n region is
10 cm and the doping concentration in the p region is 10 cm, and assume that a forward bias
of 0.30 V is applied to the pn junction. Note/ n, 1.5 x 10 em
Calculate the minority carrier concentration at the edge of the space charge regions.

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Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.
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