he band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness o
he band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness o
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You work as an engineer in a company and you have been given the assignment of
measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor
material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a
length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential
difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you
measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a)
calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of
this material.
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