Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm 3 and the hole concentration in the valance band is 1017 cm3. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T= 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K
Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm 3 and the hole concentration in the valance band is 1017 cm3. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T= 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 12P
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![Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the
conduction band is 1016 cm 3 and the hole concentration in the valance band is
107 cm3. Assume that the electron and hole concentrations vary as T2.
Calculate the intrinsic carrier concentration in silicon at T = 350 K.
Note: energy gap of silicon = 1.12 ev
Boltzmann constant = 8.61x10-5 eV/K](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F34f1b3d9-0cff-4296-b897-65f057e158e7%2F39ccb6eb-40d8-4660-a260-b13d3d36dd98%2Fguwna1d_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the
conduction band is 1016 cm 3 and the hole concentration in the valance band is
107 cm3. Assume that the electron and hole concentrations vary as T2.
Calculate the intrinsic carrier concentration in silicon at T = 350 K.
Note: energy gap of silicon = 1.12 ev
Boltzmann constant = 8.61x10-5 eV/K
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