Given the fermi energy and electron concentration 7.00 eV and 8.0x1026 e/m respectively of a Copper of resistivity 1.7x10 2-m, calculate the mean free path. (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nm
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- The current–voltage characteristic curve for a semiconductor diode as a function of temperature T is given by I = I0(eeΔV/kBT - 1)Here the first symbol e represents Euler’s number, the base of natural logarithms. The second e is the magnitude of the electron charge, the kB stands for Boltzmann’s constant, and T is the absolute temperature. (a) Set up a spreadsheet to calculate I and R = ΔV/I for ΔV = 0.400 V to 0.600 Vin increments of 0.005 V. Assume I0 = 1.00 nA. (b) Plot R versus ΔV for T = 280 K, 300 K, and 320 K.Consider a density of states N(E) of a conductor. (a) Obtain an analytical expression for the density of states at Fermi energy N(E_F) as a function of m and n, where m is the electron mass and n is the number of conduction electrons per unit volume. This expression should be in units of m^{ -2}eV^{-1} (mass^{-2}. electron-Volt^{-1}). (b) Calculation or numerical value of N(E_F) for Copper. To estimate the value of n, consider the following data for copper: molar mass 64.54 g/mol and density 8.96 g/cm^{3}. (c) Compare the result of item (b) with the result obtained from the N(E) x E curve and analytical expression for N(E). Do the values agree?X. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.
- The sensitivity of a diode thermometer depends on how much the voltage changes for a given temperature change, with the current remaining constant. What is the sensitivity for this diode thermometer, operated at 100 mA, for a temperature change from 25°C to 150°C? (a) +0.2 mV/°C; (b) +2.0 mV/°C; (c) -0.2 mV/°C; (d) -2.0 mV/°C.(a). (b). Describe the cut-off mode of a transistor. An amplifier circuit with a bipolar junction transistor (BJT) is shown in the Figure 4 Vin C1 47 μF (i). (ii). (iii). (iv). ww ww R1 10 ΚΩ R2 4.7 ΚΩ ww R3 100 Ω R4 1 ΚΩ Figure 4 C3 47 μF C2 47 μF Determine the BJT configuration, Vout Describe the BJT input and output terminals, State two of the BJT output characteristics, V 15 V Calculate the current amplification factor of the BJT, if emitter current, IE, base current, B and collector current, Ic is 4.080 mA, 35.41 μA and 4.045 mA respectively.B6
- At what pressure, in atmospheres, would the number of molecules per unit volume in an ideal gas be equal to the number density of the conduction electrons in copper, with both gas and copper at temperature T =300 K?Hand written solutions are strictly prohibited.The resistance ( k2) of a 1 cm' pure silicon crystal.[n-1x1011 cm3, le-1250 cm? V-ls, h-350 cm? V-ls1] 39 34.7 390 347
- Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10^19 m^-3 and their mobility is 1.6 m^2 (V-s), then the resistivity of the semiconductor (since, it is an n-type semiconductor contribution of holes is ignored) is close to....?A3 cm long bar of Si has a cross-sectional area of 0.2 cm? and is doped with 5 x 1017 acceptor atoms per cubic centimeter. At T 3OOK, Dp 26 cm2/s and the electron and hole lifetimes are are both 10 us. The resistance of this Si bar is O 0.83 mohms O 5.33 Ohms O 72.1 Ohms O 0.188 Ohms O 1200 Ohms