Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holesdecrease with temperature as µejh~ 1/T 32, find the bandgap of this material.Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of lengthL = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na andneglect the hole contribution to conductivity. Electron mobility in this material is known todepend on donor concentration according to an empirical formula (see section 6 of the Wikipediaarticle https://en.wikipedia.org/wiki/Electron_mobility)Hmax - Mminµ(Na) = Hmin +1+ (Na/N,)"with the parameters Umin65 cm²/(V-s), µmax1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72.(a) Determine the conductivity of your material needed to obtain the desired resistance.(b) Find the doping concentration needed to obtain the desired resistance. You will need toemploy some numerical method to solve this problem. The suggested procedure is to usean iterative solution. Namely, express in terms of conductivity and mobility and use theold Na-value to determine a better approximation. Repeat this procedure until the resultstops changing.

1. Resitivity for a semiconductor is given by following equation ρ=A expEg2kBT Where A is constant…

Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as leh ~ 1/T 312, find the bandgap of this material.

Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as leh ~ 1/T 312, find the bandgap of this material.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

See similar textbooks

Related questions

Q: 19. Consider the junction diode as ideal. The value of current flowing through AB is: 1k a www +4 V…

Q: A. Define the drift current in a semiconductor and give the mathematical expressions about both the…

A: Note: According to the complany policy, if 3 independent questions are posted, then only the first…

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

Q: For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band energy Ec.…

A: teperature, T=200 KEc=conduction bondfermi level is 0.1 ev below Ec

Q: Q8. Estimate the mean free path of electrons in copper. Assume the Fermi energy of copper is 7.03eV.…

A: Electrons in copper will undergo collisions, this will cause a change in its energy or direction.…

Q: nces in intrinsic carrier concentr st for Ge? Why is it lowest for Go ses with increasing…

A: Given as,

Q: Q1: Find the kinetic energy of electrons in the conduction band of a nondegenerate n-type…

A: To find the kinetic energy of electrons in the conduction band of a nondegenerate n-type…

Q: For Ge semiconductor, assume the Fermi energy level is 0.1 ev below the conduction band energy Ec.…

A: mass of electron, me=9.1×10-31 KgThe density or the number of quantum states available between the…

Q: e) Following the above relationship how would you classify materials as conductor, isolator, or…

A: (a). The resistance is generally defined as the property of the material due to which it opposed the…

Q: Which of the following statements is generally true regarding mobility in semiconductors such as Si…

A: The problem is based on the concept of mobility. We know that Mobility is formally defined as the…

Q: A. Deduce, with explanation, the type of carriers in the semiconductor B. Calculate the density and…

A: The value of the Hall coefficient = -3.75*10^-5 m^3/CThe Hall coefficient is negetive , Hence the…

Question

Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be
15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes
decrease with temperature as µejh~ 1/T 32, find the bandgap of this material.
Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length
L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and
neglect the hole contribution to conductivity. Electron mobility in this material is known to
depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia
article https://en.wikipedia.org/wiki/Electron_mobility)
Hmax - Mmin
µ(Na) = Hmin +
1+ (Na/N,)"
with the parameters Umin
65 cm²/(V-s), µmax
1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72.
(a) Determine the conductivity of your material needed to obtain the desired resistance.
(b) Find the doping concentration needed to obtain the desired resistance. You will need to
employ some numerical method to solve this problem. The suggested procedure is to use
an iterative solution. Namely, express in terms of conductivity and mobility and use the
old Na-value to determine a better approximation. Repeat this procedure until the result
stops changing.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

D Determine the bias current IQI, the gate-to-source voltages of the transistors, and the drain-to-source voltage of Mr. Assume circuit parameters of IREFI = 50 μA, V = 5 V, and V = -5 V. Assume transistor parameters of VTN = 0.4 V (for all transistors), Kn1=0.3 mA/V2, Kn2 = 0.2 mA/V² and Kn3 = 0.14 mA/V². V+= 5V IREFI RD=4K M₁ VDSI Vasi ↓101 M2 VDS2 VGS2- M3 - + VGS 3 V=-5V
Q2/ If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm
2000 50 Consider the following energy band diagram. The 1000 Si 20 500 Ha, D, semiconductor is Si maintained at 300K with E¡-Ef 10 200 5 = E/4 at x=L & -L, and Ef - E;= E/4 at x=0. Note 100 Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 diagram. 5000 GaAs 100 Hai Dn 2000 Un, Up can be estimated from the figure. 50 1000 20 500 H,.D, 10 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V s) Mobility (cm²/V s) Diffusivity (cm²/s) Diffusivity (cm²/Is)
Please do D, E, and F
2
Is a semiconductor a good example to illustrate the contrast between a conductor and an insulator? A graph may help you make your case.
Photon energy of the light with a given wavelength could be calculated by the following equation (attached in this QnA post):*hint: wavelength of light is not in SI unit, unit conversion is needed. What is the band gap of the semiconductor, if it can only be excited by the light with wavelength equal to or smaller than 500 nm?*hint: the photon energy needs to be greater or equal to the band gap, in order to excite the semiconductor
For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. Find the number of quantum states between Ec and Ec + 7 x kbT i. ii. Determine the probability of a state being empty of an electron at Ec+ 7 x kbT. ii. Find the temperature at which there is an electron at the state Ec+ 0.7 « kbT with probability 30% iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution Find the difference in temperature between items i and v. iv above and express this difference as percentage |
Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 6.02 x 1023mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm
3. For a Si bar of length 5um, doped n-type at 3x10¹ cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 107cm/s.
Hand written solutions are strictly prohibited.
Can a semiconductor be used to describe the distinction between a conductor and an insulator? Why not use a graph to support your arguments?