For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 7 x kbT Determine the probability of a state being empty of an ii. electron at Ec+ 7 x kbT. iii. Find the temperature at which there is an electron at the state Ec+ 0.7 < kbT with probability 30% iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution Find the difference in temperature between items ii and V. iv above and express this difference as percentage
For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 7 x kbT Determine the probability of a state being empty of an ii. electron at Ec+ 7 x kbT. iii. Find the temperature at which there is an electron at the state Ec+ 0.7 < kbT with probability 30% iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution Find the difference in temperature between items ii and V. iv above and express this difference as percentage
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