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3. For a Si bar of length 5μm, doped n-type at 3x10¹5 cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 10 cm/s.

3. For a Si bar of length 5μm, doped n-type at 3x10¹5 cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 10 cm/s.

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3. For a Si bar of length 5um, doped n-type at 3x10¹ cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 107cm/s.
Transcribed Image Text:3. For a Si bar of length 5um, doped n-type at 3x10¹ cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 107cm/s.
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