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Which statement about the intrinsic carrier concentration in a semiconductor material is FALSE?

The intrinsic carrier concentration is exponentially dependent on the inverse of the temperature of the semiconductor material.

In an intrinsic semiconductor material, the concentration of electrons in the conduction band is equal to the concentration holes in the valence band.

The intrinsic carrier concentration of a semiconductor material at a constant temperature depends on the Fermi energy.

The intrinsic Fermi energy is positioned near the center of the bandgap for an intrinsic semiconductor.

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