The conductivity of a semiconductor is 250 S/m at 20 °C and 1100 S/m at 100 °C. Prove that the band gap of this semiconductor is 0.263 eV.
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- 2Calculate the density of electrons and holes of silicon at a temperature of 300 (k) knowing that the energy gap E = 1.12ev is the Fermi level.What is the maximum energy gap (in eV) of a semiconductor for which electrons can make the transition from the valence band to the conduction band by absorbing light from the Balmer beta line?
- At room temperature the semiconductor Si has an energy gap of AE = 1.12 eV, that separates the valence band from the conduction band. (a) (b) (c) Calculate the ratio of the number of electrons in the higher energy level (conduction band) to the number in the lower energy level (valence band) at room temperature. What is the ratio, if the temperature is increased to T = 2000 K? What effect has a smaller band gap on thermal occupation?Is a semiconductor a good example to illustrate the contrast between a conductor and an insulator? A graph may help you make your case.A non-pure semiconductor has an energy gap of 1ev and a hole density of 1022m−3 at 300K and an electron density of 1016 m−3. Find the Fermi Level location at 500k.
- Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)The occupancy probability function can be applied to semiconductors as well as to metals. In semiconductors the Fermi energy is close to the midpoint of the gap between the valence band and the conduction band. For germanium, the gap width is 0.67 eV. What is the probability that (a) a state at the bottom of the conduction band is occupied and (b) a state at the top of the valence band is not occupied? Assume that T = 290 K. (Note: In a pure semiconductor, the Fermi energy lies symmetrically between the population of conduction electrons and the population of holes and thus is at the center of the gap.There need not be an available state at the location of the Fermi energy.)