Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)

Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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