Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)
Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
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Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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Transcribed Image Text:Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal
structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency
integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes,
solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of
other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
A researcher has grown compositionally dependent In1-xGaxAs films on GaAs.
What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your
answer. What specific edges will you be targeting and why?
(4)
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