2. The concentration of donor impurity atoms in silicon is Nd 1015 cm-3. Assume an electron mobility of H, = 1300 cm?/V-s and a hole mobility of u, = 450 cm?/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?
2. The concentration of donor impurity atoms in silicon is Nd 1015 cm-3. Assume an electron mobility of H, = 1300 cm?/V-s and a hole mobility of u, = 450 cm?/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?
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Transcribed Image Text:2. The concentration of donor impurity atoms in silicon is Nd 1015 cm-3. Assume an electron mobility of H, 1300
cm?/V-s and a hole mobility of u, = 450 cm?/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity
of the material?
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