Q2: A cubic doped n-type silicon semiconductor sample at T-300 K, R=10k2, J-50A/cm² when 5V is applied. Calculate Un=0.85m²/V.s, ND. .
Q2: A cubic doped n-type silicon semiconductor sample at T-300 K, R=10k2, J-50A/cm² when 5V is applied. Calculate Un=0.85m²/V.s, ND. .
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