Q2: A cubic doped n-type silicon semiconductor sample at T-300 K, R=10k2, J-50A/cm² when 5V is applied. Calculate Un=0.85m²/V.s, ND. .
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Q: 1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x…
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Q: A silicon sample is doped with Nd = 1017cm-3 of As atoms.  
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