Which of the following statements about drift and diffusion is FALSE?
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Which of the following statements about drift and diffusion is FALSE?
a. The diffusion current of electrons is opposite to the concentration gradient, dndx.
b. In silicon with equal concentrations of electrons and holes in an electric field, the drift current of electrons is higher than the drift current of holes.
c. An electric field is visible in a band diagram as a slope, where holes will move to higher energy states (drift up the slope) and electrons will move to lower energy states (drift down the slope).
d. The diffusion coefficient of holes can be increased by lowering the temperature of the semiconductor.
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