silicon p-n step junction diode is doped with No = 10¹6 cm³³ and № = 4 x 0¹8 cm-³ on the n side and p side, respectively. Calculate the build-in otential, space charge width, and maximum field at zero bias at room emperature.

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Chapter12: The Solid State
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2. A silicon p-n step junction diode is doped with No = 10¹6 cm-³ and No = 4 x
1018 cm-³ on the n side and p side, respectively. Calculate the build-in
potential, space charge width, and maximum field at zero bias at room
temperature.
Transcribed Image Text:2. A silicon p-n step junction diode is doped with No = 10¹6 cm-³ and No = 4 x 1018 cm-³ on the n side and p side, respectively. Calculate the build-in potential, space charge width, and maximum field at zero bias at room temperature.
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