Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.6, Problem 3.14E
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Construct a forward bias diode circuit in multi-sim (desktop, not live). Simulate and find the current through the resistor and the voltage across the resistor.
An Si abrupt p-n junction is doped with N. = 109 cm on p-side and N, = 5 x 10" on n-side. Findthe penetration of transition region into n-side at equilibrium (300 K).(a) 0.455 um(b) 0.00227 am(c) 0.227 jum(d) 0.00455 um
Question2: A pn junction uses NA = 2x1016 /cm and Np=9x1015 /cm³. Determine the built-in
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Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Consider a pn junction in forward-bias at room temperature. To obtain a current of 1mA with a voltage of 750 mV, Calculate Is. V = 26 mV. Select one: O a. 2.97 x 1018 A O b. None of these Oc. 2.97 x 10-16 A O d. 2.97 x 10-17 Aarrow_forwardHi! Please help me answer this problem our topic here is about Diode in DC & AC Circuits. Please show your correct and complete solution. ASAP! THANK YOUUU!arrow_forward+ VD - LD w- R3 R1 V2 V1 (10 points) V3 R2 In the circuit above, given V = 6V, V, = 4V, V3 = 1V, R1 = 20, R2 = 4N, R3 = 10, and the turn on voltage of the diode is Vah = 0.7V, determine: %3D The voltage across the diode: Vp = V help (numbers) Then the current through the diode is: Ip = A help (numbers) Note: Be careful about the directions of the voltage sources. Your answers are checked to two decimal places.arrow_forward
- Not Gradedarrow_forwardThe built-in voltage for a Si p-n junction was determined with th following inputs. Arrange your own design or by any other mean possible to compute the built-in Voltage for a Germanium p- junction. NA = 10¹5 cm-3 N₂ = 10¹7 cm-³ Assume ni = 10¹⁰ cm -3 " and KT/q = 0.026Varrow_forwardPlease answer in typing formatarrow_forward
- Given that the zener diode has a valaue of Vz = 35 V. Find the maximum current flowing through the zener diode. **Please show your correct and complete solution for this circuit problem. ASAP! Thank you!**arrow_forwardIn the circuit below, we have a Zener Diode circuit with a load, RL. Use the same measurements for source voltage V1 and resistor R3 resistance as in the circuit schematic. V1 -15V R3 2700 D1 1N753A RL Determine the lowest possible value for the load RL, so that the voltage drop across it is equal to the Zener voltage. For your diode, use model Zener 1N753A. This diode has a Zener voltage of 6.2V, a Zener current of 60mA, a Zener impedence of 72, and a test current of 20mA.arrow_forwardAn abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm-3 cm³ and Na and N₂ = 5 X 1016 cm¯³ at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 3.88 X 105 V/cm Emax = 1.35 X 105 V/cm Emax 1.70 X 105 V/cm O Emax = 3.21 X 105 V/cm =arrow_forward
- In the circuit shown below, if VA= 1V and V-2V, the statuses of the diodes are (Assuming ideal diodes) D₁ VA V₂₁ D₂ ERL Vout Select one: O a D₂ is ON, D₂ is ON O b. None of these Oc. Dy is OFF, D₂ is ON O d. Dy is ON, D₂ is OFFarrow_forwardA one-sided p+- n Si junction at 300 K is doped with NA = 1019 cm-3 . Choose values of ND and junction area such that the junction capacitance Cj = 0.6 pF at VR = 5.0 V.arrow_forward21. An ideal Schottky junction is formed by p-Si with Na = 10 cm 1/C ? 3 and an unknown metal. The results of the C-V measurements of this structure together with a straight-line fit are shown in the figure. Determine the work function of the metal. Answer: 4.73 eV - 0.2 V Show the workings to get to the provided answer pleasearrow_forward
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