Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.2, Problem 3.3E
To determine

The value of NA at T=300K .

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Find values of the intrinsic carrier concentration ni for silicon at -55°C. 1.5 x 1010 carriers/cm3 O 5 x 1010 carriers/cm3 2.7 x 106 carriers/cm2 2.7 x 106 carriers/cm3
Silicon is doped with 6 × 1017 boron atoms/cm3 and 2×1017 phosphorusatoms/cm3 (a)Is this n-or p-type silicon? (b) What are the hole and electron concentrations at room temperature?
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