Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.1, Problem 3.1E
To determine
The intrinsic carrier density for silicon.
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A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016
Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm.
cm-3
Find values of the intrinsic carrier concentration ni for
silicon at -55°C.
1.5 x 1010 carriers/cm3
O 5 x 1010 carriers/cm3
2.7 x 106 carriers/cm2
2.7 x 106 carriers/cm3
Q1
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Find the resistivity of a. p-type silicon with NA = 10^10 /cm^3. Determine the value of the concentration of minority charges. CONSTANTS FOR SILICON q= un = Hp = ni = V₂ = 1.6×10-19 C 1350 cm²/Vs 480 cm²/Vs 1.5×10¹⁰ /cm³ 26 mVarrow_forwardI want solve questionarrow_forwardPlease answer in typing format solution please only typing format solution please Please It's urgentarrow_forward
- Calculate the intrinsic carrier density n, for Silicon at I = 292 K. Show all your work and write your answer with 4 significant figures.arrow_forwardThe thermal equilibrum concentration of the electron at T=300K in silicon is n0=5*10^4cc. What is the hole concentrationarrow_forward2.27 A diode is made by using an n-type Si substrate (D = 4.0 × 1015 cm-³) and then adding acceptors to a concentration of NA = 5.3 × 1017 cm-3 to one region. What are po and no in the p-type region?arrow_forward
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