Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.5P
To determine
The hole and the electron concentration at
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semiconductors
Silicon is doped with an acceptor concentration of 2.5 × 1018/cm3. Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?
Problem 2
In a P-type semiconductor. the Fermi level is 0.3 cV above the
valance band at a room temperature of 30O °K. Determine the new position of the
Fermi level for termperatures of (a) 350 K and (b) 400 K.
The Fermi level in a P-type material is given by
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- question in photo plzarrow_forwardSilicon is doped with a donor concentration of 5×1016/cm3. Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?arrow_forwardCompute the value of DC resistance and AC resistance of a Germanium junction diode at 250C with reverse saturation current, I0 = 25µA and at an applied voltage of 0.2V across the diode.arrow_forward
- Silicon is doped with an indium concentration of 8×1019/cm3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?arrow_forwardA germanium diode has a current reaches 80% ofits saturation point at 115°C. Calculate the voltage and the ratio of the current for a forward bias of 0.8V to the current for the same magnitude in reverse bias when the temperature rises to 165°C.arrow_forwardSilicon is doped with an indium concentration of 8x10^19 / cm^3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of silicon material at 300K. Is this material n- or p-type?arrow_forward
- The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.arrow_forwardConsider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).arrow_forwardThe hole concentration in silicon is 2.25x10 cm. Assume T = 300K, n = 1.5x10 cm", KT=0.026eV. Is the semiconductor n type or p type and why? Determine n, and Po Determine Er-Evarrow_forward
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