Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.27P
To determine
The diffusion capacitance and transit time.
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The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the
figure. Which one of the following statement is not true?
E (V/cm)
X (4em)
-0.1
Both n-type and p-type depletion regions are uniformly doped.
The potential difference across the depletion region is 700 mV.
Left side of the junction in n-type and right side is p-type.
It is required to grade a string having seven suspension insulators. If the pin to earth capacitance are all equal to C, determine the line to pin capacitance that would give the same voltage across each insulator (C1, C2, …….C6) of the string.
A pn junction operating in this forward-bias region with a current I of 0.4 mA is found to have a diffusion capacitance of 1 pF. What diffusion capacitance do you expect this junction to have at I = 0.1 mA? What is the mean transit time for this junction?
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Explain how a pn junction works. Specifically, what happens when you bring together a block of p-type material and a block of n-type material? Why is a depletion region formed? Why do we have an electric field with no applied voltage? Why is there a built-in voltage with no applied voltage? Explain the I-V curve of a pn junction.arrow_forward8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: )with the guard ring. (7) without guard ring. 10 95% () 86 13%|arrow_forwardConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?arrow_forward
- 8. Each of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: (i) with the guard ring, (ii) without guard ring. [(i) 95% (ii) 86-13%)arrow_forwardFor an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3(a)calculate Vbi at 250, 300, 350, 400, 450 and 500 K and plot Vbi versus T. (b) comment on your result in terms of energy band diagram. (c) find the depletion layer width and the maximum field at zero bias for T = 300 Karrow_forwardA pn junction has NA >> ND . We expect that: There is no depletion region, since NA * ND. The depletion region is wider in the p-type material than in the n-type material. The depletion region width is equal in the n-type and p-type regions. The depletion region is wider in the n-type material than in the p-type material.arrow_forward
- Please show full work thankarrow_forwardClearly describe the capacitances of a p-n junction under no-bias, forward-bias, and reverse- bias with zener region via figures, equations, etc.arrow_forward8. Each of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: (1) with the guard ring. (if) without guard ring. () 95% (i1) 86-13%]arrow_forward
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