Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.6, Problem 3.16E
To determine
The value of
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Question2: A pn junction uses NA = 2x1016 /cm and Np=9x1015 /cm³. Determine the built-in
voltage at room temperature (T-600k)?
For a given RC charging circuit with R 82KOhms, C 150UF and Vs 18 V,
i. Calculate the capacitor charging voltage at t-
ii. Specify the charging current at 2T where T= RC.
iii. Explain the effect in the charging period if the value of R is doubled with the
capacitance value of C kept constant. Prove your answer by computing the
resulting full-charge periods when R is 82KOhms and when R is doubled
with C kept constant.
%3D
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(1 mark)
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Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- 2.18 * tored 2.19 A capacitance of 2.0 uF with an initial charge Q, is switched into a series circuit consisting of a 10.0-2 resistance. Find Qo if the energy dissipated in the resistance is 3.6 m.. Ans. 120.0 pC of C farads hasarrow_forward21. An ideal Schottky junction is formed by p-Si with Na = 10 cm 1/C ? 3 and an unknown metal. The results of the C-V measurements of this structure together with a straight-line fit are shown in the figure. Determine the work function of the metal. Answer: 4.73 eV - 0.2 V Show the workings to get to the provided answer pleasearrow_forwardA one-sided p+- n Si junction at 300 K is doped with NA = 1019 cm-3 . Choose values of ND and junction area such that the junction capacitance Cj = 0.6 pF at VR = 5.0 V.arrow_forward
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