Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.22P
To determine
To derive: The derivation of current-voltage relationship is given as
Also, the value of
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An abrupt silicon pn junction at zero bias
has dopant concentrations of Nd = 1 X
-3
10¹7 cm-³ and N₂ = 5 X 10¹6 cm-³ at T =
a
300 K. Calculate the Fermi level on each
side of the junction with respect to the
intrinsic Fermi level and add the two
values together to get Vbi.
Vbi = 0.856 V
O Vbi
Vbi = 0.814 V
Vbi = 0.796 V
Vbi = 0.773 V
o Vbi
Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping
concentrations of Na = 10¹6 cm-³and N₁ = 10¹5 cm-³. Assume that the intrinsic
concentration n₁ = 1.5 x 10¹0 cm-3 and the reverse bias V₁ = 5V
Note/ = 1.035 x 10-¹2F/cm
e = 1.6x 10-¹⁹ C
Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping
concentrations of Na = 101¹6cm-3and Na = 10¹5 cm-3. Assume that the intrinsic
concentration n₁ = 1.5 x 10¹0 cm-3 and the reverse bias V₁ = 5V
Note/1.035 x 10-¹2F/cm
e 1.6x 10-19 C
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- SOLVE STEP BY STEP IN DIGITAL FORMAT For each of the circuits shown below, draw its voltage transfer curve, using the constant-drop model (all diodes are silicon identical, V_Don = 0.7V). Consider a variation of the input voltage from -10V to +10V. Vi V₁ D₁ D₁ Z D₂ 1k Circuit 1 1k Circuit 2 V₂ + V₂ Vi Vi 1k 1k D₁ Circuit 3 D₁ 1k ww 1k Circuit 4 + V₂ + V₂arrow_forwardExplain what happens to the depletion width of a p-n junction as we increase the doping level on both of its sides.arrow_forwardAn abrupt gallium arsenide pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm-3 and N, = 1 X 1017 cm-3 at T = 300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vþi- Vы 3 1.323 V Vы 3 1.264 V Vbi = 1.173 V Vы 3 1.214 Varrow_forward
- A Si diode has a reverse saturation current of 2.5uA at 3000 find forward voltage for a forward current of 10mAarrow_forwardA pn step junction is fabricated in silicon with a donor concentration of 5 x 1015 cm-3 on one side of the junction and an acceptor concentration of 2 x 1015 cm-3 on the other. A bias voltage of 0.3 V is applied to the p-side (relative to the n-side). Find the depletion width W at 300 K. Repeat when the bias voltage is reversed. Select 2 correct answer(s) W = 1.04 μm W = 0.567 μm W = 0.322 μm W = 0.899 μm W = 1.323 μm W = 1.84 μm when the bias voltage is reversed W = 0.929 μm when the bias voltage is reversed W = 1.131 μm when the bias voltage is reversed W = 0.355 μm when the bias voltage is reversed W = 0.527 μm when the bias voltage is reversed.arrow_forwardIn a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?arrow_forward
- The example problem is attched below,Solve 4th ques by using the equations in other imagearrow_forwardI Homework 6b 03182022.docx.pdf - Adobe Reader File Edit View Window Help Tools Fill & Sign Comment Оpen 4 125% IT Sign In • Export PDF • Create PDF 5. v Edit PDF Adobe Acrobat Pro Determine the n-type doping concentration to meet Easily edit text and images in PDF documents Start Now the following specifications for a Si p-n junction: • Combine PDF • Send Files NA = 5 x 1018/cm³. Emax = 5 x 10$ V/cm at • Store Files ах VR = -35V, T=300K. Hint: Assume |VR] >> Vbi. In other words, ignore Vbi. 71/2 2g(V –VR)( N,Np bi A D E. max E. N, + N S A D 10:22 AM Type here to search 31°C W 23-Mar-22 ---arrow_forwardA diode has a doping of NA = 14 x 1018 /cm3 on the p-type side and ND = 1015 /cm3 on the n-type side. Calculate the zero-bias junction capacitance per cm2 for the diode. Consider ni = 1010/cm3 and VT = 0.026 V.arrow_forward
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