Explanation Calculation: The built-in voltage of a junction is given as V 0 = V T ln ( N A N D n i 2 ) Here, V 0 is the built-in voltage of a junction, V T is the thermal voltage at room temperature, n i is the intrinsic carrier concentration, n i = 1.5 × 10 10 / cm 3 N A is the acceptor concentration, N A = 10 17 / cm 3 and N D is the donor concentration, N D = 10 17 / cm 3 . Substitute 1.5 × 10 10 /cm 3 for n i , 26 mV for V T , 10 16 / cm 3 for N D and 10 17 / cm 3 for N A in the above equation. V 0 = ( 26 ) ln ( ( 10 16 ) ( 10 17 ) ( 1.5 × 10 10 ) 2 ) = ( 26 ) ln ( ( 10 23 ) 2.25 × 10 20 ) = ( 26 ) ( 29.12 ) = 757 mV The permittivity for intrinsic silicon is given by ε s = 11.7 ε 0 Here, ε s is the permittivity for intrinsic silicon and ε 0 is the permittivity of free space ε 0 = 8.854 × 10 − 14 F / cm . Substitute 8.854 × 10 − 14 F / cm for ε 0 in the above equation. ε s = 11.7 ( 8.854 × 10 − 14 F / cm ) = 1.04 × 10 − 12 F / cm The expression for junction capacitance is given by C j 0 = A ( q ε s 2 ) [ N A N D N A + N D ] 1 V 0 Here, C j 0 is the junction capacitance, A is the area of the p n junction, ε s is the electrical permittivity of the silicon, q is the charge on the electron, and V 0 is the barrier voltage. Substitute 1.6 × 10 − 19 C for q , 100 μ m 2 for A , 1

Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

7th Edition

ISBN: 9780199339136

Author: Adel S. Sedra, Kenneth C. Smith

Publisher: Oxford University Press

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Problem 3 Assume that a[n] and y[n] satisfy the relation y[n] = −x[n−2]+h[n−2] * x[n+1] h[n] -3-2-10123 n where h[n] is shown in the figure. Can we equivalently write that y[n] = g[n] * x[n] for some sequence g[n] ? If so, plot g[n]. If not, explain why.

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

Ch. 3.1 - Prob. 3.1E Ch. 3.2 - Prob. 3.2E Ch. 3.2 - Prob. 3.3E Ch. 3.3 - Prob. 3.4E Ch. 3.3 - Prob. 3.5E Ch. 3.3 - Prob. 3.6E Ch. 3.4 - Prob. 3.7E Ch. 3.4 - Prob. 3.8E Ch. 3.4 - Prob. 3.9E Ch. 3.5 - Prob. 3.10E

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