Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Concept explainers
Question
Chapter 3.3, Problem 3.4E
(a)
To determine
The electrons drift velocity.
(b)
To determine
The time taken by the electron to cross the
(c)
To determine
The drift current density.
(d)
To determine
The drift current.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
A silicon semiconductor has a shape of a rectangular bar with a cross sectional area of 1x10-6cm2 and a lenght of 0.1 cm. How do i calculate the current through the semiconductor if a basis of 5 volts is applied across its length?
(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is
100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per
cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon
n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
Q2) A silicon crystal having a cross-sectional area of 0.001cm2
and a length of 10 cm is connected at it s ends with 10v battery at
temperature 300°K, when the current is 100mA. Find the resistivity
and the conductivity?
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- How many valence electrons are generally contained in materials used for insulators?arrow_forwardThe temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.arrow_forwardPlease do not copy from other websites Correct and detailed answer will be Upvoted else downvoted. Thank you!arrow_forward
- We know that the Si-diode will pass the current in a forward biased region. This behavior is useful for many applications. C)Plot the V-I Characteristic Curve of the diode.arrow_forwardConsider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).arrow_forwardConsider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3arrow_forward
- B/ The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 x 10-4 s/m. Find the barrier potential at 300°K, if the Hn = 2.4µp?arrow_forwardA pn diode is a semiconductor device in which, unlike in a metal, the current flow is due not only to negative electron charge flow but also due to positive charges. The positive charges are usually referred to as holes, as they are really "deficit" in the negative charge distribution. The semiconduction material (usually silicon with Er = 11 or gallium arsenide with e, impurities are added. Initially, the physically important region on the p side contains a density p+ of positive charges per unit volume, whereas the n region contains a negative charge density p-. When they are brought in contact, a static equilibrium follows in which a surplus of negative charges will accumulate in the (thin) p region, and a surplus of positive charges will accumulate in the (much thicker) n region. These two layers produce an electric field similar to that of a capacitor with infinite parallel plates. In equilibrium, the total number of positive charges in the n region is equal to the number of…arrow_forwardNonearrow_forward
- Find the value of the current across both diodesarrow_forwardA bar of p-type silicon, has a cross-sectional area A = 10.6 cm and a length L=1.2*10^ -3 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) Impurity doping concentration? (d) What is the resulting hole mobilityarrow_forwardi need the answer quicklyarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Power System Analysis and Design (MindTap Course ...Electrical EngineeringISBN:9781305632134Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. SarmaPublisher:Cengage LearningElectricity for Refrigeration, Heating, and Air C...Mechanical EngineeringISBN:9781337399128Author:Russell E. SmithPublisher:Cengage LearningDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Power System Analysis and Design (MindTap Course ...
Electrical Engineering
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:Cengage Learning
Electricity for Refrigeration, Heating, and Air C...
Mechanical Engineering
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Cengage Learning
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
What is an electric furnace and how does it work?; Author: Fire & Ice Heating and Air Conditioning Inc;https://www.youtube.com/watch?v=wjAWecPGi0M;License: Standard Youtube License