Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.2, Problem 3.2E
To determine
The electron and hole concentration at
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3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the
questions by considering the diodes as ideal and practical silicon ones respectively.
Vs
Vs
Vs
R2
R2
R2
Vout
P
D
R1
R1
R3
R1
(a) Vout = ?
(b) Vp = ?
(c) Vp = ?
Note: Vp means the voltage at point p.
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(i) In an intrinsic semiconductor, the electrical conductivity takes into account the contribution of electron and hole current. (ii) Furthermore, every electron that is promoted across the band gap leaves behind a hole in the valence band, that is, n = p = ni. The above statements are: A. True B. False D. No idea C. Neither True nor False E. Cannot be determined Other:
Please Help ASAP!!!!
Just do A-C
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Q3. G/ When a silicon material is doped with Arsenic (As) that has 5 valance electrons, the doped material is called: * P-type O N-type Аcсeptor Donor Q3. H/ At any finite temperature, the energy level at which the probability of finding electrons falls to half is called: Your answerarrow_forwardQuestion 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionarrow_forwardWhich of the following options is FALSE about the semiconductor diodes? Lütfen birini seçin: O A. Diodes are made of semiconductor materials with additional dopping to enhance their conducting properties. O B. They are non-linear devices; hence, if one wants to draw their current-voltage graph, they will end up with an exponential plot. O C. The type of the semiconductor material matters in the characteristics of the device; such that the forward-bias voltage (Vp.) is different for Ge and Si based diodes. O D. They ideally let the electric current flow in the direction from cathode terminal to anode terminal, while completely blocking it in the direction from anode to cathode.arrow_forward
- Q3. F/ When a large voltage is applied, the resistance of the space charge region becomes: * Larger Smaller Resistance equal to the applied voltage Q3. G/ When a silicon material is doped with Arsenic (As) that has 5 valance electrons, the doped material is called: * O P-type O N-type Acceptor O Donor Q3. H/ At any finite temperature, the energy level at which the probability of finding electrons falls to half is called: Q4/ Have you answered all the questions? O Yes O Noarrow_forwardSolve all showing all the steps in detailarrow_forwardWhen a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.arrow_forward
- A silicon diode described by the Shockley equation has n = 2 and operates at 150° C with a current of 1 mA and voltage of 0.25 V. Part A Determine the current after the voltage is increased to 0.32 V. Express your answer to three significant figures and include the appropriate units. HA ? ip = Value Unitsarrow_forward3.60 The circuit in Fig. P3.60 implements a complemen- tary-output rectifier. Sketch and clearly label the waveforms of vo and vo. Assume a 0.7-V drop across each conducting diode. If the magnitude of the average of each output is to be 15 V, find the required amplitude of the sine wave across the entire secondary winding. What is the PIV of each diode?arrow_forwardThe energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e, the Fermi energy level Ef is constant) is shown in the figure. The valence band E, is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is A. p-type Ef Ev z = 0 z = L If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar isarrow_forward
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