DeGarmo's Materials and Processes in Manufacturing
12th Edition
ISBN: 9781118987674
Author: J. T. Black, Ronald A. Kohser
Publisher: WILEY
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Textbook Question
Chapter 29, Problem 19RQ
Name two direct-write lithography techniques.
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Chapter 29 Solutions
DeGarmo's Materials and Processes in Manufacturing
Ch. 29 - Over the latter half of the 20th century, what...Ch. 29 - What was the major motivation for developing...Ch. 29 - Prob. 3RQCh. 29 - What is an example of a device feature that is...Ch. 29 - What type of manufacturing technology dominates...Ch. 29 - Name the four categories of miniature systems...Ch. 29 - Give two differences between lab-on-a-chip and...Ch. 29 - What is a scaling law?Ch. 29 - As the primary dimensions of an object decrease,...Ch. 29 - In the design of a water heater, the mean time...
Ch. 29 - Prob. 11RQCh. 29 - Name two conventional manufacturing processes that...Ch. 29 - Prob. 13RQCh. 29 - Why does breadth of scale of a product have an...Ch. 29 - What is the most complicated, expensive, and...Ch. 29 - Name three purposes that a resist mask can play.Ch. 29 - Name four key lithography methods.Ch. 29 - Name two through-mask lithography techniques.Ch. 29 - Name two direct-write lithography techniques.Ch. 29 - List the sequence of steps involved in...Ch. 29 - Of the two major classifications of photoresists,...Ch. 29 - List four requirements of a photoresist.Ch. 29 - What limits the resolution of a photoresist?Ch. 29 - What is meant by resist sensitivity?Ch. 29 - What is one requirement that contributes to the...Ch. 29 - List the three types of exposure methods used in...Ch. 29 - Why is projection printing equipment called a...Ch. 29 - What are typical materials etched during...Ch. 29 - What is etch bias?Ch. 29 - Prob. 30RQCh. 29 - What are some possible defects that can result...Ch. 29 - What are some possible defects that can result...Ch. 29 - List and describe two properties of etchants.Ch. 29 - What is etch anisotropy dependent upon?Ch. 29 - What is the difference between wet and dry?...Ch. 29 - What is dry etching?Ch. 29 - What are the three main categories of dry etching...Ch. 29 - What is the difference between plasma etching and...Ch. 29 - What is deep reactive ion etching?Ch. 29 - What is a benefit of using UV lasers to machine...Ch. 29 - Which type of non-lithographic micromachining...Ch. 29 - What are thin films?Ch. 29 - A) What is the difference between solution...Ch. 29 - What are the two broad categories of vapor...Ch. 29 - List two different types of physical vapor...Ch. 29 - List two advantages of sputtering over...Ch. 29 - What is meant by step coverage with regards to...Ch. 29 - Why is step coverage important?Ch. 29 - Prob. 49RQCh. 29 - What does gettering mean in relation to wafer...Ch. 29 - How are undesirable gas-phase reactions controlled...Ch. 29 - What is the key difference in the reactor designs...Ch. 29 - What are the two types of LPCVD reactor designs?...Ch. 29 - In metallization, what is the difference between a...Ch. 29 - What is the advantage of using plasma-enhanced on...Ch. 29 - A) What is epitaxy? B) is it important for...Ch. 29 - Name four techniques for solution deposition onto...Ch. 29 - Name four roll-to-roll processing techniques for...Ch. 29 - What is a semiconductor?Ch. 29 - Name three common semiconductor materials.Ch. 29 - Give three reasons why silicon is the most popular...Ch. 29 - Prob. 62RQCh. 29 - What is a silicon boule?Ch. 29 - Prob. 64RQCh. 29 - What are some geometric concerns involved with...Ch. 29 - What is meant by the term doping?Ch. 29 - What is the difference between n�type and...Ch. 29 - Name three methods for doping a silicon wafer.Ch. 29 - Prob. 69RQCh. 29 - Prob. 70RQCh. 29 - Prob. 71RQCh. 29 - Why are rapid thermal processing technologies...Ch. 29 - What are two ways in which silicon dioxide is...Ch. 29 - Give two reasons why wet oxidation is better...Ch. 29 - What is a p�n junction? \What can it be used...Ch. 29 - Prob. 76RQCh. 29 - Assuming an n�doped substrate is clean, list the...Ch. 29 - What is planarization and why is it needed?Ch. 29 - What is meant by the term ULSI?Ch. 29 - In general, what technological breakthroughs were...Ch. 29 - What drives the increase in component density and...Ch. 29 - Why are clean rooms so important to...Ch. 29 - What is the advantage of electron microscopy over...Ch. 29 - What is the collective advantage of...Ch. 29 - Why do samples analyzed in an electron microscopes...Ch. 29 - What are two differences between a scanning...Ch. 29 - What is important about a dual�beam focused ion...Ch. 29 - Why is white light normally preferred for...Ch. 29 - What is one advantage of an atomic force...Ch. 29 - What is the breadth of scale of an automotive...Ch. 29 - What is the breadth of scale of a computer...Ch. 29 - Which has a larger breadth of scale, the...Ch. 29 - Prob. 4PCh. 29 - A piece of silicon has an integrated resistor...
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- Answer each of the following questions in one to three sentences. (a) What is lithography field? (b) What is misalignment in lithography? (e) What is selectivity in an etching process? (d) What is end-point detection in an etching process?arrow_forwardWorking principle of 3D plastic printersarrow_forwardTwo students decided to print a prototype for a gear. Student A use layer thickness of .1 mm and an infill density of 25%. Student B use a layer thickness of 0.07 mm and an infill density of 45%. Which student will take less time to print the gear? Select one: Stu nt since the ckness of layer is smaller and the infill density is higher. O We can't decide which process takes less time O Student A since the thickness of the layer is larger and the infill density is lower. Student B because thickness is higher than B and the infill density has no effect on the process speed. Student A because thickness is higher than B and the infill density has no effect on the process speed.arrow_forward
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- Is this true or false pleasearrow_forward4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si I photoresist 0.5 umarrow_forwardHow far from the lens must the film in a camera be, if the lens has a 32.0 mm focal length and is being used to photograph a flower 80.0 cm away? Describe the image formed.arrow_forward
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