If the dose rate in free space at a distance of 80.5cm is 122.2cGy/min, what would be the dose rate in free space at 100.5cm? Next, if the dose rate in free space at a distance of 100cm is 200cGy/min, how far do you need to be from the source so the dose rate does not exceed 10cGy/min?

Q: Q2. Consider the general form of the frequency dependent relative permittivity of a medium: €, (w) =…

A: Given Consider the general form of the frequency dependent relative permittivity of a medium: Er(w).…

Q: 4) Knowing that Planck's constant h = 6.626 × 10-³4 J s, the speed of light (in vacuum) co ≈ 3 × 10⁰…

A: Given, Planck's constant, h=6.626×10-34 Js. Speed of light, co=3×108 ms. Elementary charge,…

Q: Q.2 (b) A piezoelectric crystal is characterized by a constant, 12 × 10-13 (V/m) / (N/m2). The…

A: Given data is- crystal diameter = 8mm thickness= 2mm  leakage resistance= 108 Ohm Solution -1…

Q: O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

A: The electron (n) and hole concentration (p) will be the same in a pure semiconductor and this…

Q: O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

A:

Q: 01) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

A: As per our guidelines we are supposed to answer?️ only one question. Kindly repost other questions…

Q: A potential difference of 20 V is applied longitudinally to a rectangular specimen of intrinsic Ge…

A:

Q: A beam of white light, containing wavelengths from 400 nm (violet) to 750 nm (red), is directed at a…

A: Given that; λ1=400nm(voilet)λ2=750nm(red)d=0.002mm

Q: O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

A:

Q: Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the…

A: To calculatea) Show the number of photon absorbs per unit volumeb) Compute the value of thickness

Q: Q1.) A CRT deflection plates of (60mm) long and (0.5cm) apart. The screen is (22cm away from the…

A: We are authorized to answer three subparts at a time since you have not mentioned which part you are…

Q: Q/Let auniform Surface chargedensity of 5nc/a? be present at z=oplane,auniform line charge density…

A: The Potential function for a point charge can be written as : VP = q4πε∘rThe potential function for…

Q: A point charge 5nC is located (2,0, 4) and a point charge -2nC is located at (–3,0,5). Find É at (1,…

A:

Q: OD What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =…

A: According to question: a) The Energy band gap in silicon at T=300K is given as Eg=1.12eV The…

Q: What are electron,hole,intrinsic carrier concentration, and energy band gap in si with (a) Nd=…

A:

Q: Calculate the resistivity at 280 K for a Si sample doped with 2.12x1013 atoms per m3 of boron atoms.…

A:

Q: QLet auniform surface chargedensity of 5nc/m be present at zsoplane, auniform line chagedausity o78…

A: As per bartleby expert policy, only one individual question is to be answered. Kindly repost…

Q: 36T.10-9 Find the potential at the point K (8, 8, 7,8) due to point charge of Q = 5,1 nC placed at…

A: Given: Point K8, 8, 7.8 Point charge Q=5.1 nC at P6.7, 5.4, 9.4 ε0=136π×10-9

Q: Calculate the amount of charge represented by four million protons. +6.408 (10)^(-13). O60.504…

A: Number of  protons =4 milion=4×106 proton.

Q: Problem 4) a) If d is the thickness of a photodetector material, Io is the intensity of the incoming…

A:

Q: Qs: An ordinary end-fire array of 10 isotropic elements with the spacing between the elements i…

A: (a) Progressive Phase Excitation: In an end-fire array, progressive phase excitation means that each…

Q: 3) A list of anode materials that are considered for use in x-ray generation in an x- ray…

A:

Q: OD What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =…

A: According to the question, there is Si material with the parameters; Effective density of conduction…

Q: 2. The permittivity of the Earth's ionosphere can be described by an unmagnetized cold plasma model:…

A: I

Q: Q.2: Consider two charges of 5nC located at (0,10,0) and (0,15,0) where should be third charge of…

A: The charge distribution of the 5nC is shown below:  The net electric field at the origin is zero,…

Q: a) Calculate the drift velocity of electrons in aluminum wire with a diameter of 3.20 mm carrying a…

A: As per our policy, i have attempted 1 question Given I=5 AD=3.20 mm Calculating number of charges…

Q: Q.1: An electron boron atom moves from the fourth orbit to the first excited orbit. Calculate the…

A: Note: Since you have not specified any question to be answered, as per our honor code, we are…

Q: In a concentric spherical electrode system, the outer radius is 7 cm and the voltage is 100 kV and…

A: Given Outer radius r2=7 cm geometric characteristic =3.5 V=100 kV Ed=6 kV/cm

Q: Ql: give me concept terms for the following Briefly Germanium , forbidden gap , ev

A: “Since you have asked multiple questions, we will solve the first question for you. If you want any…

Q: Q1:Elecrron density varation wirh x axis as 1030 + 2x+ 4x².Find the difution curren at (x= 0.5) and…

A:

Q: 9- Calculate the intrinsic carrier density for silicon at T = 350 K. The constant B= 7.3 x10^15…

A: Given  : The given question they want to know the value of intrinsic carrier density with respect to…

Q: Q.2: Calculate the shortest wavelength for electron revolving in the fourth excited germanium atom,…

A: The shortest wavelength is calculated as shown below

Q: A single-crystal silicon sample 0.25 µm-thick is illuminated with a monochromatic light (single fre-…

A: Given data, hν=3 eVPincidemt=10 mWSilicon sample=0.25 Hm

Q: O What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd-…

A:

Q: Given a 202-cm n-type Ge bar with material life time of 100u s, A-Imm and L=1 cm. One side of the…

A:

Q: O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

A:

Q: R1. A Solar Cell is uniformly illuminated by a monochromatic ligut of wavelength F0o nm and…

A: Given: Wavelength, λ=700 nm Intensity,I=20 mW/cm2=2 W/m2 To find: Incident photon Flux

Q: e density of carriers in the conduction and

A: NOTE- “Since you have asked multiple questions, we will solve the first question for you. If you…

Q: A laser beam of 0.02 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The…

A: According to question we have to find the value of IL.

Power Measurement

According to Blondel's theorem, the total power is measured with one less number of wattmeters than the number of wires present in the system. So, a single-phase and two-wire system will require one wattmeter and a single-phase and the three-wire system will require two wattmeters, and a three-phase and the three-wire system will also require two wattmeters and a three-phase and the four-wire system will require three wattmeter devices. The wattmeter is a device that measures power using one voltage and one current input as shown in the above figure. Multiple current or voltage input pair cables are used by many power analyzers and digital storage oscilloscopes (DSOs) for measuring watts, in effect within a single instrument acting as multiple wattmeters. It is possible to measure three-phase and four-wire power with one correctly specified power analyzer.