Calculate the resistivity at 280 K for a Si sample doped with 2.12x1013 atoms per m3 of boron atoms. Assume that the impurities are completely ionized and the mobilities of electrons and m² V-s and 0.05 holes are 1.5 respectively independent of impurity concentrations. The V-s intrinsic carrier density of Si at 280 K is 9.65x10°m3

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Calculate the resistivity at 280 K for a Si sample doped with
2.12x1013
atoms per
m3
of
boron atoms. Assume that the impurities are completely ionized and the mobilities of electrons and
m?
V-s
holes are 1.5
and 0.05
respectively independent of impurity concentrations. The
V-s
intrinsic carrier density of Si at 280 K is
9.65×10°m³
Transcribed Image Text:Calculate the resistivity at 280 K for a Si sample doped with 2.12x1013 atoms per m3 of boron atoms. Assume that the impurities are completely ionized and the mobilities of electrons and m? V-s holes are 1.5 and 0.05 respectively independent of impurity concentrations. The V-s intrinsic carrier density of Si at 280 K is 9.65×10°m³
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