The carrier density without additives at 300K is 1.5 x 1010 / cm3 in silicon. What are the equilibrium electron and hole densities for n-type silicon doped to 2.25 x 1015 atoms / cm3? Please choose one: A. n0 = 2,25 x 10 ^ 17 / cm3, p0 = 1,0 x 1014 / cm3 B. n0 = 1.5 x 10 ^ 16 / cm3, p0 = 1.5 x 1012 / cm3 C. none of the above D. n0 = 1.5 x 10 ^ 10 / cm3, p0 = 2.25 x 1015 / cm3
The carrier density without additives at 300K is 1.5 x 1010 / cm3 in silicon. What are the equilibrium electron and hole densities for n-type silicon doped to 2.25 x 1015 atoms / cm3? Please choose one: A. n0 = 2,25 x 10 ^ 17 / cm3, p0 = 1,0 x 1014 / cm3 B. n0 = 1.5 x 10 ^ 16 / cm3, p0 = 1.5 x 1012 / cm3 C. none of the above D. n0 = 1.5 x 10 ^ 10 / cm3, p0 = 2.25 x 1015 / cm3
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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The carrier density without additives at 300K is 1.5 x 1010 / cm3 in silicon. What are the equilibrium electron and hole densities for n-type silicon doped to 2.25 x 1015 atoms / cm3?
Please choose one:
A. n0 = 2,25 x 10 ^ 17 / cm3, p0 = 1,0 x 1014 / cm3
B. n0 = 1.5 x 10 ^ 16 / cm3, p0 = 1.5 x 1012 / cm3
C. none of the above
D. n0 = 1.5 x 10 ^ 10 / cm3, p0 = 2.25 x 1015 / cm3
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