(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s corresponding values for pure silicon are 0.13 and 0.05 m/v-s respectively. intrinsic conductivity for both the materials Assume n=2.5x 10m' for Silicon at room temperature. (1-6) Calculate the donor corcentertion in N-type Germanium having resistivity of 100 the Find the values of 10"/m for Germanium and ni=1.5x im take arl 6x 10 c and u 036mt/
(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s corresponding values for pure silicon are 0.13 and 0.05 m/v-s respectively. intrinsic conductivity for both the materials Assume n=2.5x 10m' for Silicon at room temperature. (1-6) Calculate the donor corcentertion in N-type Germanium having resistivity of 100 the Find the values of 10"/m for Germanium and ni=1.5x im take arl 6x 10 c and u 036mt/
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Transcribed Image Text:(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s
corresponding values for pure silicon are 0.13 and 0.05 m/v-s respectively.
intrinsic conductivity for both the materials Assume n=2.5x
10m for Silicon at room temperature.
(1-6) Calculate the donor corcentertion in N-type Germanium having resistivity of 100
q=1.6x 10" c and pa 0.36m/v-s.
the
Find the values of
10"/m for Germanium and ni=1.5x
Sam take
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