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Problem 4) a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 10[1-exp(-ad)] dhv 1ph = b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the

Problem 4) a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 10[1-exp(-ad)] dhv 1ph = b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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4C) please help with part C only. Thank you!
rate of charge collection is limited by rate of photogeneration. What is the external photocurrent density for the photodetectors in (b) if the incident radiation is 100 μW mm-2? 1x108 1x107 1x106 α (m-¹) 1x105 1x104= 1x103 5 4 3 Si 0.2 2 0.4 a-Si:H Ge 0.6 0.8 GaAs InP 1.2 Wavelength (um) Figure 2: Absorption coefficients for various semiconductors as a function of wavelength. 1 Ino.7Gao.3A$0.64P0.36 Photon energy (eV) 0.9 0.8 0.7 1.0 In0.53 Ga0.47As 1.4 1.6 1.8
Transcribed Image Text:rate of charge collection is limited by rate of photogeneration. What is the external photocurrent density for the photodetectors in (b) if the incident radiation is 100 μW mm-2? 1x108 1x107 1x106 α (m-¹) 1x105 1x104= 1x103 5 4 3 Si 0.2 2 0.4 a-Si:H Ge 0.6 0.8 GaAs InP 1.2 Wavelength (um) Figure 2: Absorption coefficients for various semiconductors as a function of wavelength. 1 Ino.7Gao.3A$0.64P0.36 Photon energy (eV) 0.9 0.8 0.7 1.0 In0.53 Ga0.47As 1.4 1.6 1.8
Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 1 ph 10[1-exp(-ad)] dhv b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the
Transcribed Image Text:Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 1 ph 10[1-exp(-ad)] dhv b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the
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