01) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10 cm and Na = 1x10 cm and (b) additional 6x101° cm of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm . T= 300 K, Boltzmann constant = 1.38x 102 Kg s²K'. O 2) What are the types of thermodynamic system? Explain it in details. Q3) What are the types of periodic motion and resorting forces? Explain it in details.

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O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x10 cm and Na = 1×10° cm and (b) additional 6x10 cm 3 of Nd? Note: use Effective density of
conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm 3. T= 300 K,
Boltzmann constant = 1.38x 1023 Kgs²K'.
O 2) What are the types of thermodynamic system? Explain it in details.
Q3) What are the types of periodic motion and resorting forces? Explain it in details.
Transcribed Image Text:O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10 cm and Na = 1×10° cm and (b) additional 6x10 cm 3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 cm . Effective density of valance band =1.04 x 10 19 cm 3. T= 300 K, Boltzmann constant = 1.38x 1023 Kgs²K'. O 2) What are the types of thermodynamic system? Explain it in details. Q3) What are the types of periodic motion and resorting forces? Explain it in details.
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