A constant diffusion current of electrons is established through a silicon semiconductor material. The value of current density is Jn= –0.8 A/cm2. The electron concentration at x=0 is n(0)=1.5x1015 cm–3. The diffusion constant of electrons and holes are 35 and 14 cm2/s, respectively .Determine the hole drift current density

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Answered: A constant diffusion current of…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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A constant diffusion current of electrons is established through a silicon semiconductor material. The value of current density is J_n= –0.8 A/cm². The electron concentration at x=0 is n(0)=1.5x10¹⁵ cm^–3. The diffusion constant of electrons and holes are 35 and 14 cm²/s, respectively .

Determine the hole drift current density

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