ii. Acceptor type impurities will be added to this doped semiconductor material. For the following different acceptor impurity concentrations, find the conductivity of the material in terms of o and draw the energy band diagram clearly indicating the approximate position of the Fermi level. Assume that electron and hole mobilities remain same for total doping concentration levels between 10 and 105 atoms/cm. a. Na-5x10" atoms/cm b. Na=10 atoms/cm

ii. Acceptor type impurities will be added to this doped semiconductor material. For the following different acceptor impurity concentrations, find the conductivity of the material in terms of o and draw the energy band diagram clearly indicating the approximate position of the Fermi level. Assume that electron and hole mobilities remain same for total doping concentration levels between 10 and 105 atoms/cm. a. Na-5x10" atoms/cm b. Na=10 atoms/cm

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
What will be the value of the reverse saturation current for a Si diode operating in forward bias mode. The following information is given: Diode current 3 A Voltage across diode 0.25 V. Temperature is 300 K.
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
For the diodes used , at what Voltage (VD) does condection stars .
JAE To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. A Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition +||| V Battery Diode Voltage 0.1V 0.5V 2.0V 5.0v 10v 20V 25V 30V Voltage Note: used any electronics software to perform this activity Reverse Bias Condition Diode Current ELECTRONICS ENGINEERING (ECE) DEPARTMENT SINCE VIT
USING D1 1N4001G or SILICON DIODE.
In a P-type semiconductor a. both holes and free electrons are equal in number b. holes are minority charge carriers C. holes are majority charge carriers d. free electrons are majority charge carriers
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
1) Describe how to make n- and p-type semiconductors for silicon. 2) Describe the location of the Fermi energy levels in the band gap for n-type and p-type semiconductors.
Sketch the transfer characteristic vo versus vi for the limiter circuit shown below. All diodes begin conducting at a forward voltage drop of 0.5V and have of 0.7V when fully conducting at 1mA.
semiconductors
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE