O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =4x10 cm and Na 1x10 cm and (b) additional 6x101 cm of Nd? Note: use Effective density of-3conduction band = 2.8 x 10 19 cm *. Effective density of valance band =1.04 x 1019cm-3. T= 300 K,Boltzmann constant = 1.38x 1023 Kg s?K'.

Answered: Image /qna-images/answer/3af7dc08-b643-4620-9b17-3a246121738d.jpg

O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd D 4x10 cm and Na 1x10 cm * and (b) additional 6x10 cm of Nd? Note: use Effective density of conduction band 2.8 x 10 9 cm . Effective density of valance band 1.04 x 10 19 cm 3. T= 300 K, Boltzmann constant 1.38x 1023 Kg s'K'.

O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd D 4x10 cm and Na 1x10 cm * and (b) additional 6x10 cm of Nd? Note: use Effective density of conduction band 2.8 x 10 9 cm . Effective density of valance band 1.04 x 10 19 cm 3. T= 300 K, Boltzmann constant 1.38x 1023 Kg s'K'.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm3 and the hole concentration in the valance band is 107 cm3. Assume that the electron and hole concentrations vary as T2. Calculate the intrinsic carrier concentration in silicon at T = 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K
I need the answer as soon as possible
Please answer in short like it definitely don't reject in shorts please.. Thanks.. Please Asap
Difficult problem that I need some help on please
Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample. Don't make me made I wrote the1T = 10^-4 Wb/cm2 but why you use like 1T=10^4
Subject: Electronic s
Consider a material where the probability of a hole occupying a state in the middle of the valence band at room temperature is 0.7, what type of material is this? O An insulator O A conductor There is no enough information to determine the nature of the material O A semiconductor
Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T= 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-³ and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for acceptors is 0.0345 eV. The fraction of total holes that are still in the acceptor states?
the electron and hole mobilities in silicon at 320 K are 0.13 and 0.029, and assuming hole and electron charge densities are 0.0033 C/m ³ and -0.0033 C/m ³, 3 :respectively, find the component of the conductivity due (a) ;to holes the component of the conductivity due (b) ;to electrons .the conductivity (c)
A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of 10 nA. Solve for the following: a. the diode current at room temperature b. the reverse current when the temperature increased to 50 °C Properties Atomic Number Atomic Weight Density (g/cm³) Relative Permittivity (Dielectric Constant) Atoms/cm³ Energy Gap, Ego at OK (eV) Energy Gap, Eg at 300K (eV) Resistivity at 300K (ohm-cm) Electron Mobility, μ at 300K (cm²/V-s) Hole Mobility, μp at 300K (cm²/V-s) Intrinsic Concentration, n; at 300K (cm³) Electron Diffusion Constant, D₁ at 300K (cm²/s) Hole Diffusion Constant, D, at 300K (cm³/s) Melting Point (°C) Silicon 14 28.1 2.83 11.9 5 x 10^22 1.21 1.12 2.3 x 10^5 1500 475 1.45 x 10^10 34 13 1415 Germanium 32 72.6 5.32 16 4.4 x 10^22 0.785 0.72 45 3800 1800 2.5 x 10^13 99 47 937
(a) Why Ge material has a lower Vhi than Si at T = 300 K and GaAs has a higher Vbi than Si at T = 300 K? Consider doping of both p and n regions are fixed for Ge, Si and GaAs diode being considered here. (b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA 4.5 × 1016 / cm³ and Np = 5.6 × 1017 / cm³. Value of ni at T = 300 K is 1.5 × 1010 / cm3 . Calculate (i) built in potential (ii) total depletion width W in um (iii) the depletion capacitance in F/cm2 Note: give two of the question's answers completely. Read the questions carefully several times and give correct answer. Don't give current existing answers in Chegg. As most of the existing answers of these question in Chegg is wrong. If you do not follow the instruction, I will give you negative review.
A lightly-doped p-type Si region has a hole concentration of 1*10^11 cm-3 at a temperature of 320 K. Assume the hole mobility is 470 cm^2/Vs and the electron mobility is 1430 cm^2/Vs at 320 K. The bandgap of Si is 1.12 eV. Calculate the resistivity of this Si region at 320 K.