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A germanium P N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the reverse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. d) Repeat part (b) for the Si diode.

A germanium P N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the reverse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. d) Repeat part (b) for the Si diode.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A germanium P*N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm3³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the re rse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. Repeat part (b) for the Si diode. d)
Transcribed Image Text:A germanium P*N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm3³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the re rse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. Repeat part (b) for the Si diode. d)
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