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What will happen to minor carrier density, total carrier density, and Efn if we add iron and boron? Adding iron atoms -> less excess carriers due to trapping. Adding boron -> increasing minor carriers. Adding boron-> decreasing Efn value. Addding boron-> will not affect total carrier density. adding iron impurities will generate more excess carriers. Adding boron will not affect Efn. Undoped silicon -> n.p=10^20; Adding Iron -> increasing Efn. Undoped ->

What will happen to minor carrier density, total carrier density, and Efn if we add iron and boron? Adding iron atoms -> less excess carriers due to trapping. Adding boron -> increasing minor carriers. Adding boron-> decreasing Efn value. Addding boron-> will not affect total carrier density. adding iron impurities will generate more excess carriers. Adding boron will not affect Efn. Undoped silicon -> n.p=10^20; Adding Iron -> increasing Efn. Undoped ->

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A piece of undoped silicon is exposed to a light source generating 10^12 excess carriers (cm^-3). What will happen to minor carrier density, total carrier density, and Efn if we add iron and boron? Adding iron atoms -> less excess carriers due to trapping. Adding boron -> increasing minor carriers. Adding boron-> decreasing Efn value. Addding boron-> will not affect total carrier density. Undoped -> adding iron impurities will generate more excess carriers. Adding boron will not affect Efn. Undoped silicon -> n.p=10^20; Adding Iron -> increasing Efn.
Transcribed Image Text:A piece of undoped silicon is exposed to a light source generating 10^12 excess carriers (cm^-3). What will happen to minor carrier density, total carrier density, and Efn if we add iron and boron? Adding iron atoms -> less excess carriers due to trapping. Adding boron -> increasing minor carriers. Adding boron-> decreasing Efn value. Addding boron-> will not affect total carrier density. Undoped -> adding iron impurities will generate more excess carriers. Adding boron will not affect Efn. Undoped silicon -> n.p=10^20; Adding Iron -> increasing Efn.
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