Q.2] A photodiode is made with p-type Ge doped with 1023 Ga atoms/m' and n- type Ge with 1022 As atoms/m³. For Ge, the dielectric constant, K = 16. The intrinsic carrier concentration of Ge at 300 K is given by n; = 2.5 x 1019. Calculate the width of the depletion layers and the charge transfer per unit area at 300 K. Ans. 0.27um, 3.9x104 C/m?

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Q.2] A photodiode is made with p-type Ge doped with 1023 Ga atoms/m' and n-
type Ge with 1022 As atoms/m'. For Ge, the dielectric constant, K = 16. The
intrinsic carrier concentration of Ge at 300 K is given by n;
= 2.5 x 1019.
Calculate the width of the depletion layers and the charge transfer per unit area
at 300 K.
Ans. 0.27um, 3.9x104 C/m?
Transcribed Image Text:Q.2] A photodiode is made with p-type Ge doped with 1023 Ga atoms/m' and n- type Ge with 1022 As atoms/m'. For Ge, the dielectric constant, K = 16. The intrinsic carrier concentration of Ge at 300 K is given by n; = 2.5 x 1019. Calculate the width of the depletion layers and the charge transfer per unit area at 300 K. Ans. 0.27um, 3.9x104 C/m?
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