5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature andeach Al atom creates a charge carrier.a) Is the material obtained a p-type or an n-type semiconductor?b) Calculate the electrical conductivity of this material at room temperature, consideringthat the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.

a) aluminium is a trivalent impurities.so when Ge doped with aluminium makes the semiconductor is a…

5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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