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5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
Transcribed Image Text:5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
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