O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =4x1016and Na = 1x10 cm * and (b) additional 6x10 cm * of Nd? Note: use Effective density of%3D19conduction band = 2.8 x 10 " cm *. Effective density of valance band =1.04 x 10 " cm *. T= 300 K,Boltzmann constant = 1.38x 102 Kg s K.

Answered: Image /qna-images/answer/b3d9f240-93bb-4854-bee6-3058f09807cc.jpg

O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10 cm * and Na = 1x10 cm 3 and (b) additional 6x10 cm -3 of Nd? Note: use Effective density of %3D conduction band = 2.8 x 10 " cm *. Effective density of valance band =1.04 x 10 " cm *. T= 300 K, Boltzmann constant = 1.38x 1023 Kg s K'.

O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10 cm * and Na = 1x10 cm 3 and (b) additional 6x10 cm -3 of Nd? Note: use Effective density of %3D conduction band = 2.8 x 10 " cm . Effective density of valance band =1.04 x 10 " cm . T= 300 K, Boltzmann constant = 1.38x 1023 Kg s K'.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample. Don't make me made I wrote the1T = 10^-4 Wb/cm2 but why you use like 1T=10^4
Consider a material where the probability of a hole occupying a state in the middle of the valence band at room temperature is 0.7, what type of material is this? O An insulator O A conductor There is no enough information to determine the nature of the material O A semiconductor
A constant diffusion current of electrons is established through a silicon semiconductor material. The value of current density is Jn= –0.8 A/cm2. The electron concentration at x=0 is n(0)=1.5x1015 cm–3. The diffusion constant of electrons and holes are 35 and 14 cm2/s, respectively . Determine the hole drift current density
Which of the following option is FALSE for n-type semiconductor materials? Lütfen birini seçin: O A. None O B. The band gap between the conduction band and the valance band is comparatively less than that of undoped semicondctor materials. O C. The number of carrier electrons is slighlty less than that of intrinsic semiconductor materials. O D. The number of conduction band electrons increases. O E. All O F. Since the number of mobile electrons get larger during the doping process, the electrons become the majority carriers.
Show all the steps in detail and explain your working
1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 10-1 T magnetic field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall voltage of - 5.48 mV develops, determine the majority carrier concentration in m3. b) Are the majority carriers electrons or holes? c) Is this semiconductor n-type or p-type? d) Has the sample been doped with donors or acceptors? e) Determine Ec-EF, in eV. f) Use the semiconductor equation calculate the minority carrier concentration in this sample. g) What is the probability of an electron occupying an energy state at the bottom of the conduction band in this sample? h) Sketch the band diagram for this sample; label the conduction and valence bands, the Fermi level at 300 K, Eg, Ec, Ev, and state the numerical values for Eg, Ec – Ef and Ef -Ev.
the electron and hole mobilities in silicon at 320 K are 0.13 and 0.029, and assuming hole and electron charge densities are 0.0033 C/m ³ and -0.0033 C/m ³, 3 :respectively, find the component of the conductivity due (a) ;to holes the component of the conductivity due (b) ;to electrons .the conductivity (c)
Where is the Fermi-level of a boron doped Si semiconductor at 77 K, 300 K, and 600 K at full activation of dopants? The Fermi-level shall be related to the intrinsic Fermi-level Ej. (NA = 107 cm3, Eg(Si) = 1.12 ev, m,* = 0.3mo, m,* = 0.5mo.) Sketch the solution.
Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3. Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K
A lightly-doped p-type Si region has a hole concentration of 1*10^11 cm-3 at a temperature of 320 K. Assume the hole mobility is 470 cm^2/Vs and the electron mobility is 1430 cm^2/Vs at 320 K. The bandgap of Si is 1.12 eV. Calculate the resistivity of this Si region at 320 K.