1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 101T magnetic field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall voltage of - 5.48 mV develops, determine the majority carrier concentration in m3. b) Are the majority carriers electrons or holes? c) Is this semiconductor n-type or p-type? d) Has the sample been doped with donors or acceptors? e) Determine Ec- EF, in eV. f) Use the semiconductor equation calculate the minority carrier concentration in this sample. g) What is the probability of an electron occupying an energy state at the bottom of the conduction band in this sample?

1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 101T magnetic field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall voltage of - 5.48 mV develops, determine the majority carrier concentration in m3. b) Are the majority carriers electrons or holes? c) Is this semiconductor n-type or p-type? d) Has the sample been doped with donors or acceptors? e) Determine Ec- EF, in eV. f) Use the semiconductor equation calculate the minority carrier concentration in this sample. g) What is the probability of an electron occupying an energy state at the bottom of the conduction band in this sample?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Can you explain and show all the details ???
The hole concentration in silicon is 2.25x10 cm. Assume T = 300K, n = 1.5x10 cm", KT=0.026eV. Is the semiconductor n type or p type and why? Determine n, and Po Determine Er-Ev
help
A non-pure semiconductor has a gap of energy equal to 1ev. The density of the holes for it is equal to 10 m at a 18 -3 temperature of 300k and the density of 14 -3 the electrons is equal to 10 m. Find the location of the Fermi at a temperature of 500k
Intrinsic carrier concentration of pure silicon at 300 K will be .................?
Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?
Capacitance per unit area at no reverse bias is two pF/cm2. For a step graded diode of area 5cm2, what is net capacitance at 99 V reverse bias voltage?
At 300 K temperature, for a Si diode, the forward current is found to be 1 mA. If the forward voltage is 0.7 V, then estimate the reverse saturation current.