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9- Calculate the intrinsic carrier density for silicon at T = 350 K. The constant B= 7.3 x10^15 (cm-3K-3/2), the bandgap voltage Eg = 1.12 eV, and K = 8.62 x 10^-5 ev/K. 5 x 10^ 11 /cm^3 O 3.4 x 10^ 11 /cm^3 O 5.9 x 10^ 11 /cm^3 O 4.15 x 10^ 11 /cm^3

9- Calculate the intrinsic carrier density for silicon at T = 350 K. The constant B= 7.3 x10^15 (cm-3K-3/2), the bandgap voltage Eg = 1.12 eV, and K = 8.62 x 10^-5 ev/K. 5 x 10^ 11 /cm^3 O 3.4 x 10^ 11 /cm^3 O 5.9 x 10^ 11 /cm^3 O 4.15 x 10^ 11 /cm^3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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9- Calculate the intrinsic carrier density for silicon at T = 35O K. The constant B= 7.3 x10^15 (cm-3K-3/2), the bandgap voltage Eg = 1.12 eV, and K = 8.62 x 10^-5 ev/K. O 5x 10^ 11 /cm^3 O 3.4 x 10^ 11 /cm^3 5.9 x 10^ 11 /cm^3 O 4.15 x 10^ 11 /cm^3
Transcribed Image Text:9- Calculate the intrinsic carrier density for silicon at T = 35O K. The constant B= 7.3 x10^15 (cm-3K-3/2), the bandgap voltage Eg = 1.12 eV, and K = 8.62 x 10^-5 ev/K. O 5x 10^ 11 /cm^3 O 3.4 x 10^ 11 /cm^3 5.9 x 10^ 11 /cm^3 O 4.15 x 10^ 11 /cm^3
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