OD What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm * and Na = 1x10 cm and (b) additional 6x10 cm of Nd? Note: use Effective density of conduction band 2.8 x 10 " cm . Effective density of valance band 1.04 x 10 " cm . T= 300 K, %3D Boltzmann constant = 1.38x 10" Kgs K.

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O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4x10" cm and Na = 1x10" cm and (b) additional 6x10" cm of Nd? Note: use Effective density of
conduction band = 2.8 x 10 " cm . Effective density of valance band =1.04 x 10 " cm . T= 300 K,
%3D
ст
Boltzmann constant = 1.38x 10* Kg s K'.
Transcribed Image Text:O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm and Na = 1x10" cm and (b) additional 6x10" cm of Nd? Note: use Effective density of conduction band = 2.8 x 10 " cm . Effective density of valance band =1.04 x 10 " cm . T= 300 K, %3D ст Boltzmann constant = 1.38x 10* Kg s K'.
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