e density of carriers in the conduction and
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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![3. In a sample of InGaAs, the effective electron mass is 3.7 x 10-32 kg and that of
holes is 1.8 x 10-31 kg. Estimate the density of carriers in the conduction and
valence bands and the total carrier density. Take Eg to be 0.75 eV.
[2.05 x 1023 m-3, 2.20 x 1024 m-3 and 3.41 x 1017 m-3]
4. The InGaAs sample of question 3 is used in a p + n diode in which the p-type is
doped to 1027 and the n-type to 1025 m-3. Determine the barrier potential.
[0.975 V]](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F3502f7fa-32b5-46f4-b7fc-44701b0fabec%2Fba5cf909-9a75-429e-a024-c78b0621e37f%2F5cip20p_processed.jpeg&w=3840&q=75)
Transcribed Image Text:3. In a sample of InGaAs, the effective electron mass is 3.7 x 10-32 kg and that of
holes is 1.8 x 10-31 kg. Estimate the density of carriers in the conduction and
valence bands and the total carrier density. Take Eg to be 0.75 eV.
[2.05 x 1023 m-3, 2.20 x 1024 m-3 and 3.41 x 1017 m-3]
4. The InGaAs sample of question 3 is used in a p + n diode in which the p-type is
doped to 1027 and the n-type to 1025 m-3. Determine the barrier potential.
[0.975 V]
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