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For silicon , at 300 K the intrinsic carrier concentration ni is equal to 1.5* 10^16./ m^3 with full info in the pic

For silicon , at 300 K the intrinsic carrier concentration ni is equal to 1.5 x 1016-/ m³ For
extrinsic silicon doped with phosphorus at a typical concentration of 6 x 1020 impurity
atoms / m',
a) Write the concentration of majority carriers
in m3.
b) Determine the concentration of minority carriers
in m.

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