3. You uniformly dope the wafer with ND = 2 * 1015/cm³.(a) What is now the majority carrier of the wafer?(b) How many carrier electrons are there in the wafer in total?(c) How many carrier holes are there in the wafer in total?(d) What is the resistivity of the wafer?(e) Draw the energy band diagram of the wafer, indicating Ec, Ev,EF, and E;. The location of EF doesnot have to be exact, the energy levels just have to be in the correct order. Silicon Wafer5cm1cmYou are given a 1mm × 1cm × 5cm silicon wafer, shown above. The room is at 300K, and you may assumetotal ionization.

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Answered: 3. You uniformly dope the wafer with Np…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Gallium arsenide is doped at room temperature with acceptor impurity atoms at a concentration of 10¹6 cm-³. a) Find the concentration of electrons and holes. b) Is the semiconductor n-type or p-type?
You have a semiconductor layer of GaAs that is doped with acceptors to a level of 1x1023 m-3. The band-gap energy of GaAs is 1.42 eV and the intrinsic carrier concentration (hi) at 300K is 2x1012 m-3. Some of the following statements regarding this semiconductor are TRUE and some are FALSE. i. At 300K the semiconductor has 1x1023 m-3 holes. ii. At 300K the semiconductor has 1x1023 m-3 electrons. iii. The minority carrier type in this semiconductor is electrons. iv. The minority carrier type in this semiconductor is holes. v. The electron concentration at 300K in this semiconductor is 2x1012 m-3. vi. The electron concentration at 300K in this semiconductor is 2x1035 m-3. vii. Increasing the temperature to 400K will cause the acceptor concentration to increase. viii. Increasing the temperature to 400K will cause the intrinsic carrier concentration to increase. Which of the following statements is correct: (ii) and (viii) are FALSE (iii) and (v) are FALSE (v) and (viii) are FALSE (v) and…
Q2:Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K, N=3×102/m³, Na=1022/m³. Assume that n=1.5×1016/m³.
Diode current and temperature. At normal operating conditions, the current-voltage relation for a diode (p-n semiconductor junction) is given by eV 1 (V) - Is (exp (817)-1) = Where kB = 8.617 x 10-5[eV/K] In terms of e, kg, and T, what is a possible range of voltage such that the diode is approximately ohmic (satisfies Ohm's law)?
Which of the following option is FALSE for n-type semiconductor materials? Lütfen birini seçin: O A. None O B. The band gap between the conduction band and the valance band is comparatively less than that of undoped semicondctor materials. O C. The number of carrier electrons is slighlty less than that of intrinsic semiconductor materials. O D. The number of conduction band electrons increases. O E. All O F. Since the number of mobile electrons get larger during the doping process, the electrons become the majority carriers.
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A particular semiconductor is doped at ND=8xl0l6 cm-3 and NA=2xl0l6 cm-3 and ni=1010 cm-3. Assume complete ionization. Determine thermal equlibrium concentrations of majority- and minority-carrier concentrations. Lütfen birini seçin: Majority carrier; no= 8xl0l6 cm-3 Minority carrier; po = 1250 cm-3 Majority carrier; no = 6xl0l6 cm-3 Minority carrier; po = 1666 cm-3 Majority carrier; no= 2xl0l6 cm-3 Minority carrier; po = 5000 cm-3
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm2, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m2). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2x1020 electrons/m3. Given the mobility for the electrons (ue-0.4m2/V.s) and for the holes (0.2m2/V.s) O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22 O 123e22, 3.2e16, 1.25e22 Ina semiconductor it is ohserved that 0 75 of the current is carried by 2 points
Which Of the following statements is correct?
Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3. Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K

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3. You uniformly dope the wafer with Np = 2 * 1015/cm³. (a) What is now the majority carrier of the wafer? (b) How many carrier electrons are there in the wafer in total? (c) How many carrier holes are there in the wafer in total?