Consider a p-type silicon sample at 300 K with an acceptor atom concentration of 1019 (assume complete ionization). Assume that the intrinsic carrier concentration is 1.0x1010 cm3. Determine the drift current density when an electric field of 40 V/cm is applied to this extrinsic p-type semiconductor. Assume that the mobility of electrons is 1500 cm2/(V-s) and the mobility of holes is 470 cm²/(V-s). Lütfen birini seçin, a.3080 A/cm b.30080 A/cm C.30080 A d.3080 A

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Consider a p-type silicon sample at 300 K with an acceptor atom concentration of 1019
(assume complete ionization). Assume that the intrinsic carrier concentration is 1.0x1010 cm3.
Determine the drift current density when an electric field of 40 V/cm is applied to this extrinsic
p-type semiconductor. Assume that the mobility of electrons is 1500 cm2/(V-s) and the mobility of
holes is 470 cm²/(V-s).
Lütfen birini seçin,
a.3080 A/cm
b.30080 A/cm
C.30080 A
d.3080 A
Transcribed Image Text:Consider a p-type silicon sample at 300 K with an acceptor atom concentration of 1019 (assume complete ionization). Assume that the intrinsic carrier concentration is 1.0x1010 cm3. Determine the drift current density when an electric field of 40 V/cm is applied to this extrinsic p-type semiconductor. Assume that the mobility of electrons is 1500 cm2/(V-s) and the mobility of holes is 470 cm²/(V-s). Lütfen birini seçin, a.3080 A/cm b.30080 A/cm C.30080 A d.3080 A
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