Q3:- A bar of p-type silicon, has a cross-sectional area A =106 cm? and a length L= 1.2x103 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?
Q3:- A bar of p-type silicon, has a cross-sectional area A =106 cm? and a length L= 1.2x103 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?
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![Q3:- A bar of p-type silicon, has a cross-sectional area A = 106 cm? and a length L= 1.2x10-³ cm.
For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance,
(b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F8c0669da-5486-4790-b623-f3ac3e7702d3%2F3fb5cd55-f98a-4ceb-ba9c-c435b7983b21%2F5vd9dnr_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q3:- A bar of p-type silicon, has a cross-sectional area A = 106 cm? and a length L= 1.2x10-³ cm.
For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance,
(b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?
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